MOSFET transistor modeling including parasitic leakage and drain resistance
V.M. Hryha; V.M. Vintoniak; V.S. Hula
- Published
- Publisher
- Kharkiv National University of Radioelectronics
- Journal / collection
- Radiotekhnika
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.30837/rt.2025.3.222.22
The original publisher provides the full text and its access options.
Cite this source
V.M. Hryha; V.M. Vintoniak; V.S. Hula. MOSFET transistor modeling including parasitic leakage and drain resistance. Radiotekhnika. 2025-09-18. https://doi.org/10.30837/rt.2025.3.222.22