Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST)
Yu-Ting Chuang; Niall Tumilty; Tian-Li Wu
- Published
- Publisher
- MDPI AG
- Journal / collection
- Micromachines
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/mi16111233
The original publisher provides the full text and its access options.
Cite this source
Yu-Ting Chuang; Niall Tumilty; Tian-Li Wu. Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). Micromachines. 2025-10-30. https://doi.org/10.3390/mi16111233