Investigation of Temperature-Dependent Gate Degradation in Normally-Off AlGaN/GaN High-Electron-Mobility Transistor p-GaN
Jeonghyeok Yoon; Hyungtak Kim
- Published
- Publisher
- MDPI AG
- Journal / collection
- Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/electronics14091764
The original publisher provides the full text and its access options.
Cite this source
Jeonghyeok Yoon; Hyungtak Kim. Investigation of Temperature-Dependent Gate Degradation in Normally-Off AlGaN/GaN High-Electron-Mobility Transistor p-GaN. Electronics. 2025-04-26. https://doi.org/10.3390/electronics14091764