Simulation Study of High Breakdown Voltage GaN Current Aperture Vertical Electron Transistor With Graded AlGaN Buffer Layer for Power Switching Applications
Li‐E Cai; Zhi‐Yu Ma; Yi‐Fei Chen; Xiang‐Yu Liu; Chuan‐Tao Sun; Da Feng; Xiao‐bin Li; Rong‐sheng Zheng; Zai‐jun Cheng; Ji‐yan Zhang; Fei‐bing Xiong
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.70419
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Cite this source
Li‐E Cai; Zhi‐Yu Ma; Yi‐Fei Chen; Xiang‐Yu Liu; Chuan‐Tao Sun; Da Feng; Xiao‐bin Li; Rong‐sheng Zheng; Zai‐jun Cheng; Ji‐yan Zhang; Fei‐bing Xiong. Simulation Study of High Breakdown Voltage GaN Current Aperture Vertical Electron Transistor With Graded AlGaN Buffer Layer for Power Switching Applications. physica status solidi (a). 2026-06-30. https://doi.org/10.1002/pssa.70419