28 nm MOS transistor SPICE BSIM model for simulating electrical effects of 1-Grad Total Ionizing Dose based on gate oxide capacitance
L. Gelmi; M. Barbaro; M. De Matteis
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Journal of Instrumentation
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1748-0221/21/05/c05012
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Cite this source
L. Gelmi; M. Barbaro; M. De Matteis. 28 nm MOS transistor SPICE BSIM model for simulating electrical effects of 1-Grad Total Ionizing Dose based on gate oxide capacitance. Journal of Instrumentation. 2026-05-01. https://doi.org/10.1088/1748-0221/21/05/c05012