High Performance and Robust Oxide-Semiconductor Channel Transistor DRAM with Multi-tiered Architecture
Hao Shi; Tongshang Su; Xiang Nie; Sijia Li; Xiangli Liu; Huan Liu; Peng Dai; HuiHui Li; Jianqi Chen; Yuke Li; Xiangsheng Wang; Weihan Fan; Gangping Yan; Xueli Ma; Jinjuan Xiang; Hongbo Sun; Gui-Lei Wang; Hao Meng; Mingyuan Liu; Chao Zhao
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50572.2025.11353831
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Hao Shi; Tongshang Su; Xiang Nie; Sijia Li; Xiangli Liu; Huan Liu; Peng Dai; HuiHui Li; Jianqi Chen; Yuke Li; Xiangsheng Wang; Weihan Fan; Gangping Yan; Xueli Ma; Jinjuan Xiang; Hongbo Sun; Gui-Lei Wang; Hao Meng; Mingyuan Liu; Chao Zhao. High Performance and Robust Oxide-Semiconductor Channel Transistor DRAM with Multi-tiered Architecture. 2025 IEEE International Electron Devices Meeting (IEDM). 2025-12-06. https://doi.org/10.1109/iedm50572.2025.11353831