Optimization of 3D-DRAM Architecture With Oxide-Semiconductor Channel Through Process and Device Simulation
Jiseok Hong; Nouredine Rassoul; Assawer Soussou; Geert Eneman; Subhali Subhechha; Hyungrock Oh; Attilio Belmonte; Jan van Houdt; Anne S. Verhulst
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Journal of the Electron Devices Society
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/jeds.2026.3715074
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Cite this source
Jiseok Hong; Nouredine Rassoul; Assawer Soussou; Geert Eneman; Subhali Subhechha; Hyungrock Oh; Attilio Belmonte; Jan van Houdt; Anne S. Verhulst. Optimization of 3D-DRAM Architecture With Oxide-Semiconductor Channel Through Process and Device Simulation. IEEE Journal of the Electron Devices Society. 2026. https://doi.org/10.1109/jeds.2026.3715074