Enhancement‐Mode AlInGaN/GaN High‐Electron‐Mobility Transistor with p–i–n Junction and Recessed Gate
Kai Niu; Haoxiang Lin; Lie Cai; Zhichao Chen; Yifei Chen; Zhiyu Ma; Zaijun Cheng; Haifeng Lin; Feibing Xiong
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202400913
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Cite this source
Kai Niu; Haoxiang Lin; Lie Cai; Zhichao Chen; Yifei Chen; Zhiyu Ma; Zaijun Cheng; Haifeng Lin; Feibing Xiong. Enhancement‐Mode AlInGaN/GaN High‐Electron‐Mobility Transistor with p–i–n Junction and Recessed Gate. physica status solidi (a). 2025-06-08. https://doi.org/10.1002/pssa.202400913