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Research literature / Conference paper

Mathematical Modelling of Gate Leakage in Channel Interface Engineered-Electrostatic Potential Modulated Field Effect Transistor for Advanced Digital Applications

Aapurva Kaul; Sonam Rewari; Deva Nand

Published
Publisher
IEEE
Journal / collection
2025 5th International Conference on Electrical, Computer and Energy Technologies (ICECET)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/icecet63943.2025.11471702

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Aapurva Kaul; Sonam Rewari; Deva Nand. Mathematical Modelling of Gate Leakage in Channel Interface Engineered-Electrostatic Potential Modulated Field Effect Transistor for Advanced Digital Applications. 2025 5th International Conference on Electrical, Computer and Energy Technologies (ICECET). 2025-07-03. https://doi.org/10.1109/icecet63943.2025.11471702

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