Impact of Access Transistor Degradation on the Reliability of Sub-40 nm 1T1R RRAM Arrays: Characterization and Modeling
Yuhang Yang; Zongwei Wang; Haoran Wang; Lin Bao; Qishen Wang; Runsheng Wang; Yimao Cai
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2026.3658648
The original publisher provides the full text and its access options.
Cite this source
Yuhang Yang; Zongwei Wang; Haoran Wang; Lin Bao; Qishen Wang; Runsheng Wang; Yimao Cai. Impact of Access Transistor Degradation on the Reliability of Sub-40 nm 1T1R RRAM Arrays: Characterization and Modeling. IEEE Transactions on Electron Devices. 2026-03. https://doi.org/10.1109/ted.2026.3658648