Skip to content
Independent research & intelligence
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Leakage- and tunneling-current through the gate dielectric of organic thin film transistor using retarded Green’s function, creation and annihilation operators

Ali Bahari; Mandana Roodbari Shahmiri; Mohammad Bahari

Published
Publisher
Springer Science and Business Media LLC
Journal / collection
Journal of Central South University
Research area
Semiconductors
Source type
Journal article
DOI
10.1007/s11771-026-6212-7

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Ali Bahari; Mandana Roodbari Shahmiri; Mohammad Bahari. Leakage- and tunneling-current through the gate dielectric of organic thin film transistor using retarded Green’s function, creation and annihilation operators. Journal of Central South University. 2026-04. https://doi.org/10.1007/s11771-026-6212-7

Download RIS