16‐1: High Performance and Reliable 4F 2 IGZO Vertical Channel Transistor (VCT) for Advanced DRAM Cell and High Resolution Display
Daewon Ha; Pilsang Yun; Yongjin Lee; Min Hee Cho; Wonsok Lee; Kitae Kim; Kyongjun Yoo; Kyeong-ju Moon; Miryeon Kim; Su Jin Ahn; Jaihyuk Song
- Published
- Publisher
- Wiley
- Journal / collection
- SID Symposium Digest of Technical Papers
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/sdtp.70001_61
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Cite this source
Daewon Ha; Pilsang Yun; Yongjin Lee; Min Hee Cho; Wonsok Lee; Kitae Kim; Kyongjun Yoo; Kyeong-ju Moon; Miryeon Kim; Su Jin Ahn; Jaihyuk Song. 16‐1: High Performance and Reliable 4F 2 IGZO Vertical Channel Transistor (VCT) for Advanced DRAM Cell and High Resolution Display. SID Symposium Digest of Technical Papers. 2026-06. https://doi.org/10.1002/sdtp.70001_61