Low-loss SiC trench metal-oxide-semiconductor field-effect transistor with improved switching speed and excellent reverse recovery
Xiangqi Hong; Xun Li
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Semiconductor Science and Technology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1361-6641/ae41e0
The original publisher provides the full text and its access options.
Cite this source
Xiangqi Hong; Xun Li. Low-loss SiC trench metal-oxide-semiconductor field-effect transistor with improved switching speed and excellent reverse recovery. Semiconductor Science and Technology. 2026-02-01. https://doi.org/10.1088/1361-6641/ae41e0