Comprehensive analysis of the effect of optimal gate dielectric materials on stability, reliability, and electrical performance of a-Si:H thin-film transistor
Djemâa Ben Othmane; Nozha El Ahlem Doghmane; Abdellaziz Doghmane
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Journal of the Korean Physical Society
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s40042-025-01383-w
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Cite this source
Djemâa Ben Othmane; Nozha El Ahlem Doghmane; Abdellaziz Doghmane. Comprehensive analysis of the effect of optimal gate dielectric materials on stability, reliability, and electrical performance of a-Si:H thin-film transistor. Journal of the Korean Physical Society. 2025-05-14. https://doi.org/10.1007/s40042-025-01383-w