Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations (Adv. Mater. 21/2026)
Junhyung Cho; Youngmin Han; Won Woo Lee; Youngwoo Yoo; Kannan Udaya Mohanan; Chang‐Hyun Kim; Junhwan Choi; Young‐Joon Kim; Wonjun Shin; Hocheon Yoo
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/adma.72957
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Cite this source
Junhyung Cho; Youngmin Han; Won Woo Lee; Youngwoo Yoo; Kannan Udaya Mohanan; Chang‐Hyun Kim; Junhwan Choi; Young‐Joon Kim; Wonjun Shin; Hocheon Yoo. Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations (Adv. Mater. 21/2026). Advanced Materials. 2026-04. https://doi.org/10.1002/adma.72957