150 °C Compatible 4H-SiC Junction Transistor for the Precise Analog Analysis on 0.1-pC-Level Charge Signals With 0.7% Standard Error
Jiuzhou Zhao; Weizong Xu; Hao Qu; Dong Zhou; Fangfang Ren; Feng Zhou; Dunjun Chen; Rong Zhang; Youdou Zheng; Hai Lu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2025.3611177
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Cite this source
Jiuzhou Zhao; Weizong Xu; Hao Qu; Dong Zhou; Fangfang Ren; Feng Zhou; Dunjun Chen; Rong Zhang; Youdou Zheng; Hai Lu. 150 °C Compatible 4H-SiC Junction Transistor for the Precise Analog Analysis on 0.1-pC-Level Charge Signals With 0.7% Standard Error. IEEE Electron Device Letters. 2025-11. https://doi.org/10.1109/led.2025.3611177