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Research literature / Conference paper

Compressive Diffusion Break Stressor for Gate-All-Around Nanosheet pFET Transistor Performance Improvement

S. Hung; S. Mochizuki; A. Pal; X. He; C. Zhao; E. M. Bazizi; H. Zhou; J. Li; A. Tariq; A. Gasasira; V. Chen; H. Chen; A. Londono-Calderon; B. Peethala; P. Anekal; N. Loubet; B. Colombeau; B. Haran

Published
Publisher
IEEE
Journal / collection
2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Research area
Semiconductors
Source type
Conference paper
DOI
10.23919/vlsitechnologyandcir65189.2025.11075052

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Cite this source

S. Hung; S. Mochizuki; A. Pal; X. He; C. Zhao; E. M. Bazizi; H. Zhou; J. Li; A. Tariq; A. Gasasira; V. Chen; H. Chen; A. Londono-Calderon; B. Peethala; P. Anekal; N. Loubet; B. Colombeau; B. Haran. Compressive Diffusion Break Stressor for Gate-All-Around Nanosheet pFET Transistor Performance Improvement. 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2025-06-08. https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075052

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