Impact of the Gate and Fin Space Variation on Stress Modulation and FinFET Transistor Performance
Angelo Rossoni; Tomasz Brozek; Zsolt M. Kovacs-Vajna
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3648978
The original publisher provides the full text and its access options.
Cite this source
Angelo Rossoni; Tomasz Brozek; Zsolt M. Kovacs-Vajna. Impact of the Gate and Fin Space Variation on Stress Modulation and FinFET Transistor Performance. IEEE Transactions on Electron Devices. 2026-03. https://doi.org/10.1109/ted.2025.3648978