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A Steep Doping-Less SiGe Tunnel Field-Effect Transistor for Low-power and High-speed Applications

Masu Nithin; Shabya Gupta; Sachin Agrawal; Vikram Vashisth

Published
Publisher
IEEE
Journal / collection
2026 6th International Conference on Emerging VLSI and Semiconductor Technology for AI and Computing Applications (EVST)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/evst69093.2026.11660523

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Masu Nithin; Shabya Gupta; Sachin Agrawal; Vikram Vashisth. A Steep Doping-Less SiGe Tunnel Field-Effect Transistor for Low-power and High-speed Applications. 2026 6th International Conference on Emerging VLSI and Semiconductor Technology for AI and Computing Applications (EVST). 2026-06. https://doi.org/10.1109/evst69093.2026.11660523

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