Highly selective radical etching of Si 3 N 4 using NF 3 /O 2 /N 2 /H 2 mixtures on 3D multilayer stack transistor integration
Xiao Shang; Tuo Xin; Zehuan Hei; Yang Liu; Xiaodong Li; Zhonghua Jin; Baodong Han; Hongbo Sun; Chao Zhao
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/edtm65772.2026.11497284
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Cite this source
Xiao Shang; Tuo Xin; Zehuan Hei; Yang Liu; Xiaodong Li; Zhonghua Jin; Baodong Han; Hongbo Sun; Chao Zhao. Highly selective radical etching of Si 3 N 4 using NF 3 /O 2 /N 2 /H 2 mixtures on 3D multilayer stack transistor integration. 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2026-03-01. https://doi.org/10.1109/edtm65772.2026.11497284