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Research literature / Conference paper

High Performance and Reliable 4F 2 IGZO Vertical Channel Transistor (VCT) with Extremely Low Contact Resistance and 10 year BTI lifetime for sub-10nm DRAM

D. Ha; Y. Lee; K.J. Moon; S. Lee; K. Yoo; W. Lee; S. Yoo; M.H. Cho; S.N. Kim; M. Terai; M. Kim; J.H. Bae; S. Park; S.M. Lee; M. Hong; K. Sim; C. Im; S. Hong; C. Sung; H. Kim

Published
Publisher
IEEE
Journal / collection
2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Research area
Semiconductors
Source type
Conference paper
DOI
10.23919/vlsitechnologyandcir65189.2025.11074867

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D. Ha; Y. Lee; K.J. Moon; S. Lee; K. Yoo; W. Lee; S. Yoo; M.H. Cho; S.N. Kim; M. Terai; M. Kim; J.H. Bae; S. Park; S.M. Lee; M. Hong; K. Sim; C. Im; S. Hong; C. Sung; H. Kim. High Performance and Reliable 4F 2 IGZO Vertical Channel Transistor (VCT) with Extremely Low Contact Resistance and 10 year BTI lifetime for sub-10nm DRAM. 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2025-06-08. https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11074867

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