540 V Fully Vertical GaN Bipolar Transistor With 99.5% Electron Transition Efficiency and 190 Current Gain by Base Engineering
Guangyang Gu; Jiawei Tan; Weizong Xu; Yu Zhou; Yaozong Zhong; Dong Zhou; Feng Zhou; Fangfang Ren; Qian Sun; Dunjun Chen; Rong Zhang; Youdou Zheng; Hai Lu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2026.3716677
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Cite this source
Guangyang Gu; Jiawei Tan; Weizong Xu; Yu Zhou; Yaozong Zhong; Dong Zhou; Feng Zhou; Fangfang Ren; Qian Sun; Dunjun Chen; Rong Zhang; Youdou Zheng; Hai Lu. 540 V Fully Vertical GaN Bipolar Transistor With 99.5% Electron Transition Efficiency and 190 Current Gain by Base Engineering. IEEE Transactions on Electron Devices. 2026-09. https://doi.org/10.1109/ted.2026.3716677