Planar tunneling transistor based on 2D transition metal dichalcogenides heterostructures
Yong Guo; Sheng-Xiang Wang; Rui-Yang Yuan
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- The European Physical Journal B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1140/epjb/s10051-026-01159-6
The original publisher provides the full text and its access options.
Cite this source
Yong Guo; Sheng-Xiang Wang; Rui-Yang Yuan. Planar tunneling transistor based on 2D transition metal dichalcogenides heterostructures. The European Physical Journal B. 2026-04. https://doi.org/10.1140/epjb/s10051-026-01159-6