Bilayer GaN nanosheet: a potential transistor channel for next decade
Qiang Hu; Hong Li; Fengbin Liu; Jing Lu
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Physics Letters A
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.physleta.2025.131077
The original publisher provides the full text and its access options.
Cite this source
Qiang Hu; Hong Li; Fengbin Liu; Jing Lu. Bilayer GaN nanosheet: a potential transistor channel for next decade. Physics Letters A. 2025-12. https://doi.org/10.1016/j.physleta.2025.131077