full range fully analytical drain current model of double gate junctionless field effect transistor with triangle shaped spacer
Anjanmani Baro; Kaushik Chandra Deva Sarma
- Published
- Publisher
- Penerbit Universiti Malaysia Perlis
- Journal / collection
- International Journal of Nanoelectronics and Materials (IJNeaM)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.58915/ijneam.v18i2.2058
The original publisher provides the full text and its access options.
Cite this source
Anjanmani Baro; Kaushik Chandra Deva Sarma. full range fully analytical drain current model of double gate junctionless field effect transistor with triangle shaped spacer. International Journal of Nanoelectronics and Materials (IJNeaM). 2025-04-23. https://doi.org/10.58915/ijneam.v18i2.2058