Reduction Scheme of the GaN Interface State on a Metal–Oxide Semiconductor Device by Superacid
Yuta Furusawa; Xigen Li; Heajeong Cheong; Yoshio Honda; Hiroshi Amano
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.6c00686
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Cite this source
Yuta Furusawa; Xigen Li; Heajeong Cheong; Yoshio Honda; Hiroshi Amano. Reduction Scheme of the GaN Interface State on a Metal–Oxide Semiconductor Device by Superacid. ACS Applied Electronic Materials. 2026-09-01. https://doi.org/10.1021/acsaelm.6c00686