28NM FD-SOI I/O Transistor Hot-Carrier Injection at Cryogenic Temperature
G. Durand; F. E. Bergamaschi; M. Cassé; X. Federspiel; P. Galy; E. Vincent; I. Ionica
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE International Integrated Reliability Workshop (IIRW)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iirw66154.2025.11481757
The original publisher provides the full text and its access options.
Cite this source
G. Durand; F. E. Bergamaschi; M. Cassé; X. Federspiel; P. Galy; E. Vincent; I. Ionica. 28NM FD-SOI I/O Transistor Hot-Carrier Injection at Cryogenic Temperature. 2025 IEEE International Integrated Reliability Workshop (IIRW). 2025-10-05. https://doi.org/10.1109/iirw66154.2025.11481757