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Ionic Field-Effect Transistor Achieving Large Memory Window and Enhanced Retention via Ultrathin Ozone-Oxidized Barrier Layer

Jongseon Seo; Geonhui Han; Laeyong Jung; Junghoon Park; Jongho Park; Suhwan Lim; Wanki Kim; Daewon Ha; Hyunsang Hwang

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Electron Device Letters
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/led.2026.3702162

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Jongseon Seo; Geonhui Han; Laeyong Jung; Junghoon Park; Jongho Park; Suhwan Lim; Wanki Kim; Daewon Ha; Hyunsang Hwang. Ionic Field-Effect Transistor Achieving Large Memory Window and Enhanced Retention via Ultrathin Ozone-Oxidized Barrier Layer. IEEE Electron Device Letters. 2026-08. https://doi.org/10.1109/led.2026.3702162

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