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Research literature / Conference paper

Impact of Device Design Parameters on Fabricated Recessed-Gate Enhancement Mode Gallium Nitride High Electron-Mobility Transistor

Muhamad Amri Ismail; Nurul Ainie Ismail; Sharaifah Kamariah Wan Sabli

Published
Publisher
IEEE
Journal / collection
2025 IEEE 23rd Student Conference on Research and Development (SCOReD)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/scored68498.2025.11398886

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Muhamad Amri Ismail; Nurul Ainie Ismail; Sharaifah Kamariah Wan Sabli. Impact of Device Design Parameters on Fabricated Recessed-Gate Enhancement Mode Gallium Nitride High Electron-Mobility Transistor. 2025 IEEE 23rd Student Conference on Research and Development (SCOReD). 2025-11-25. https://doi.org/10.1109/scored68498.2025.11398886

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