Simulation of a Tunnel Field-Effect Transistor with Sharp Source and Drain Schottky Barrier Contacts
I. Semenikhin; D. Svintsov; V. Vyurkov; K. Rudenko; V. Lukichev
- Published
- Publisher
- Pleiades Publishing Ltd
- Journal / collection
- Russian Microelectronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1134/s1063739725602085
The original publisher provides the full text and its access options.
Cite this source
I. Semenikhin; D. Svintsov; V. Vyurkov; K. Rudenko; V. Lukichev. Simulation of a Tunnel Field-Effect Transistor with Sharp Source and Drain Schottky Barrier Contacts. Russian Microelectronics. 2025-12. https://doi.org/10.1134/s1063739725602085