Characteristics prediction of sub-5 nm nanosheet field effect transistor (FET) using a machine learning approach
Roer Eka Pawinanto; Muhammad Reva Ferdiansyah; Muhammad Adli Rizqulloh; Wira Hadi Kusuma; Jahril Nur Fauzan; Resa Pramudita; Erik Haritman; Ibnu Hartopo; Budi Mulyanti
- Published
- Publisher
- Penerbit Universiti Malaysia Perlis
- Journal / collection
- International Journal of Nanoelectronics and Materials (IJNeaM)
- Research area
- AI & compute
- Source type
- Journal article
- DOI
- 10.58915/ijneam.v19i2.3105
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Cite this source
Roer Eka Pawinanto; Muhammad Reva Ferdiansyah; Muhammad Adli Rizqulloh; Wira Hadi Kusuma; Jahril Nur Fauzan; Resa Pramudita; Erik Haritman; Ibnu Hartopo; Budi Mulyanti. Characteristics prediction of sub-5 nm nanosheet field effect transistor (FET) using a machine learning approach. International Journal of Nanoelectronics and Materials (IJNeaM). 2026-04-07. https://doi.org/10.58915/ijneam.v19i2.3105