Radiation-Induced Charge Trapping Effect in BST/AlGaN/GaN Transistor: Gamma-Ray Dosimeter
Vikas Pandey; Vishal Gupta; Chaitanya B. Auti; Naresh Jingar; Pradeep Kumar; Satyajit Sahu; Ankur Gupta; Sudhiranjan Tripathy; Surendra Singh Barala; Mahesh Kumar
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.6c01298
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Cite this source
Vikas Pandey; Vishal Gupta; Chaitanya B. Auti; Naresh Jingar; Pradeep Kumar; Satyajit Sahu; Ankur Gupta; Sudhiranjan Tripathy; Surendra Singh Barala; Mahesh Kumar. Radiation-Induced Charge Trapping Effect in BST/AlGaN/GaN Transistor: Gamma-Ray Dosimeter. ACS Applied Electronic Materials. 2026-08-20. https://doi.org/10.1021/acsaelm.6c01298