Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor
A. E. Atamuratov; D. R. Rajapov; M. M. Khalilloev; K. Sivasankaran; A. E. Abdikarimov
- Published
- Publisher
- Springer Science and Business Media LLC
- Research area
- Semiconductors
- Source type
- Preprint / posted paper
- DOI
- 10.21203/rs.3.rs-9499857/v1
This is a preprint or other posted paper. Check the original source for its review and publication status.
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Cite this source
A. E. Atamuratov; D. R. Rajapov; M. M. Khalilloev; K. Sivasankaran; A. E. Abdikarimov. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor. Springer Science and Business Media LLC. 2026-05-06. https://doi.org/10.21203/rs.3.rs-9499857/v1