Junction Extension Design Considerations for Low Leakage Vertical Channel DRAM Cell Array Transistor
Moonyoung Jeong; Kilho Yu; Yootak Jun; Jaehyun Choi; Seungwoo Park; Junsoo Kim; Junghoon Oh; Segeun Park; Jaihyuk Song
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 IEEE International Reliability Physics Symposium (IRPS)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/irps61424.2026.11499237
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Cite this source
Moonyoung Jeong; Kilho Yu; Yootak Jun; Jaehyun Choi; Seungwoo Park; Junsoo Kim; Junghoon Oh; Segeun Park; Jaihyuk Song. Junction Extension Design Considerations for Low Leakage Vertical Channel DRAM Cell Array Transistor. 2026 IEEE International Reliability Physics Symposium (IRPS). 2026-03-22. https://doi.org/10.1109/irps61424.2026.11499237