InSe Ferroelectric Field-Effect Transistor for Simultaneous Perception–Memory–Computation All-in-One Broadband Motion Detection
Jing Chen; Ping Li; Junqiang Zhu; Jianguo Hu; Guanhua Dun; Zhen-Hua Wang; Zheng zhang; Hengji Li; Xiao-Ming Wu; Tian-Ling Ren; Lin Han
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Nano
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsnano.5c16269
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Cite this source
Jing Chen; Ping Li; Junqiang Zhu; Jianguo Hu; Guanhua Dun; Zhen-Hua Wang; Zheng zhang; Hengji Li; Xiao-Ming Wu; Tian-Ling Ren; Lin Han. InSe Ferroelectric Field-Effect Transistor for Simultaneous Perception–Memory–Computation All-in-One Broadband Motion Detection. ACS Nano. 2025-11-13. https://doi.org/10.1021/acsnano.5c16269