Study of loading effect of cavity etching process for the inner spacer module in gate-all-around transistor manufacturing
Longrui Xia; Chaoran Yang; Junjie Li; Na Zhou; Yuxuan Zhai; Rui Chen; Jianfeng Gao; Chenchen Zhang; Qifeng Jiang; Jianghao Han; Tao Yang; Junfeng Li; Xiaolei Wang; Wenwu Wang
- Published
- Publisher
- SPIE-Intl Soc Optical Eng
- Journal / collection
- Journal of Micro/Nanopatterning, Materials, and Metrology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1117/1.jmm.24.2.023601
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Longrui Xia; Chaoran Yang; Junjie Li; Na Zhou; Yuxuan Zhai; Rui Chen; Jianfeng Gao; Chenchen Zhang; Qifeng Jiang; Jianghao Han; Tao Yang; Junfeng Li; Xiaolei Wang; Wenwu Wang. Study of loading effect of cavity etching process for the inner spacer module in gate-all-around transistor manufacturing. Journal of Micro/Nanopatterning, Materials, and Metrology. 2025-06-28. https://doi.org/10.1117/1.jmm.24.2.023601