Experimental Demonstration of Superjunction MOSFET with Low-Barrier NPN Transistor for Low Reverse Recovery Charge
Tongyang Wang; Zehong Li; Xuan Wang; Ziming Xia; Yige Zheng; Zhaoqing Jin; Min Ren
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/ispsd64561.2026.11553579
The original publisher provides the full text and its access options.
Cite this source
Tongyang Wang; Zehong Li; Xuan Wang; Ziming Xia; Yige Zheng; Zhaoqing Jin; Min Ren. Experimental Demonstration of Superjunction MOSFET with Low-Barrier NPN Transistor for Low Reverse Recovery Charge. 2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2026-05-24. https://doi.org/10.1109/ispsd64561.2026.11553579