Defect Engineering in Gallium Nitride Semiconductors for Improving Carrier Mobility and High-Power Electronic Device Reliability
Felix Denkyi
- Published
- Publisher
- Genesis Global Publication
- Journal / collection
- International Journal of Research Publication and Reviews
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.55248/gengpi.07.0926.3029
The original publisher provides the full text and its access options.
Cite this source
Felix Denkyi. Defect Engineering in Gallium Nitride Semiconductors for Improving Carrier Mobility and High-Power Electronic Device Reliability. International Journal of Research Publication and Reviews. 2026-09-25. https://doi.org/10.55248/gengpi.07.0926.3029