Scalability of Vertical-Channel-Transistor DRAM Through Parameter Tradeoffs and Layout Optimization
Jahyun Gu; Hansol Kim; Yoonki Hong; Dongkyu Jang; Sung Yun Woo
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Access
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/access.2026.3735381
The original publisher provides the full text and its access options.
Cite this source
Jahyun Gu; Hansol Kim; Yoonki Hong; Dongkyu Jang; Sung Yun Woo. Scalability of Vertical-Channel-Transistor DRAM Through Parameter Tradeoffs and Layout Optimization. IEEE Access. 2026. https://doi.org/10.1109/access.2026.3735381