4H-SiC-Based Low-Noise Front-End Charge Coupling Transistor for 0.9% Radiation Energy Resolution
Jiuzhou Zhao; Weizong Xu; Hao Qu; Dong Zhou; Danfeng Pan; Xiaoyu Tang; Fangfang Ren; Feng Zhou; Dunjun Chen; Rong Zhang; Youdou Zheng; Hai Lu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3571408
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Cite this source
Jiuzhou Zhao; Weizong Xu; Hao Qu; Dong Zhou; Danfeng Pan; Xiaoyu Tang; Fangfang Ren; Feng Zhou; Dunjun Chen; Rong Zhang; Youdou Zheng; Hai Lu. 4H-SiC-Based Low-Noise Front-End Charge Coupling Transistor for 0.9% Radiation Energy Resolution. IEEE Transactions on Electron Devices. 2025-07. https://doi.org/10.1109/ted.2025.3571408