Highly Selective Isotropic Etching of Si to SiGe Using CF4/O2/N2 Plasma for Advanced GAA Nanosheet Transistor
Jiayang Li; Xin Sun; Ziqiang Huang; David Wei Zhang
- Published
- Publisher
- MDPI AG
- Journal / collection
- Nanomaterials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/nano15191469
The original publisher provides the full text and its access options.
Cite this source
Jiayang Li; Xin Sun; Ziqiang Huang; David Wei Zhang. Highly Selective Isotropic Etching of Si to SiGe Using CF4/O2/N2 Plasma for Advanced GAA Nanosheet Transistor. Nanomaterials. 2025-09-25. https://doi.org/10.3390/nano15191469