Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

A Novel Bipolar Tunnel Field-Effect Transistor With High On–Off Current Ratio and Steep Subthreshold Swing for CMOS Image Sensor

Bin Wang; Jianguo Cui; Ziyuan Tang; Weitao Yang; Longsheng Wu; Guanyu Wang

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Sensors Journal
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/jsen.2025.3563957

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Bin Wang; Jianguo Cui; Ziyuan Tang; Weitao Yang; Longsheng Wu; Guanyu Wang. A Novel Bipolar Tunnel Field-Effect Transistor With High On–Off Current Ratio and Steep Subthreshold Swing for CMOS Image Sensor. IEEE Sensors Journal. 2025-06-15. https://doi.org/10.1109/jsen.2025.3563957

Download RIS