Design and modeling of resonant tunneling transport-controlled voltage-induced double quantum dot channel nanowire field-effect-transistor (DQD-FET) for multi-threshold current levels
N. Paul; S. Chattopadhyay
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Solid-State Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.sse.2025.109259
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Cite this source
N. Paul; S. Chattopadhyay. Design and modeling of resonant tunneling transport-controlled voltage-induced double quantum dot channel nanowire field-effect-transistor (DQD-FET) for multi-threshold current levels. Solid-State Electronics. 2025-12. https://doi.org/10.1016/j.sse.2025.109259