Improved RF linearity AlGaN/AlN/GaN high electron mobility transistor on low loss Mn-doped semi-insulating GaN substrate
Hsien-Chin Chiu; Chong-Rong Huang; Chien-Hsian Chao; Hsuan-Ling Kao; Xinke Liu; Kangkai Fan
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Materials Science in Semiconductor Processing
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mssp.2026.110578
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Cite this source
Hsien-Chin Chiu; Chong-Rong Huang; Chien-Hsian Chao; Hsuan-Ling Kao; Xinke Liu; Kangkai Fan. Improved RF linearity AlGaN/AlN/GaN high electron mobility transistor on low loss Mn-doped semi-insulating GaN substrate. Materials Science in Semiconductor Processing. 2026-07. https://doi.org/10.1016/j.mssp.2026.110578