Review of Simulation of High Electron-Mobility Transistor (HEMT) Devices
Erin Patrick; Ian Stafford; Mark Law
- Published
- Publisher
- The Electrochemical Society
- Journal / collection
- ECS Meeting Abstracts
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1149/ma2026-01331485mtgabs
The original publisher provides the full text and its access options.
Cite this source
Erin Patrick; Ian Stafford; Mark Law. Review of Simulation of High Electron-Mobility Transistor (HEMT) Devices. ECS Meeting Abstracts. 2026-07-07. https://doi.org/10.1149/ma2026-01331485mtgabs