Study of Characteristics of Semiconductor GaAs Nanoparticles Prepared by Laser Ablation Method
- Published
- Publisher
- National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)
- Journal / collection
- Nanosistemi, Nanomateriali, Nanotehnologii
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.15407/nnn.23.02.0515
The original publisher provides the full text and its access options.
Cite this source
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications). Study of Characteristics of Semiconductor GaAs Nanoparticles Prepared by Laser Ablation Method. Nanosistemi, Nanomateriali, Nanotehnologii. 2025-06. https://doi.org/10.15407/nnn.23.02.0515