Improvement of Nickel and Molybdenum Disulfide Metal-Semiconductor Contact Properties by h-BN Insertion Layer
Aoxuan Wang; Hongliang Lu; Yuming Zhang; Silu Yan
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3578408
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Cite this source
Aoxuan Wang; Hongliang Lu; Yuming Zhang; Silu Yan. Improvement of Nickel and Molybdenum Disulfide Metal-Semiconductor Contact Properties by h-BN Insertion Layer. IEEE Transactions on Electron Devices. 2025-08. https://doi.org/10.1109/ted.2025.3578408