Dual-Gate Field-Effect Transistor Ultrahighly Sensitive Hydrogen Sensors Enabled by an Ultrahigh Inherent Gain
Junyi Qian; Zhongqiu Hua; Zinan Zhi; Wentao Sun; Mengmeng Xiao; Shangjing Yang; Yu Xia; Kailing Sun; Zhiyong Zhang
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.5c00381
The original publisher provides the full text and its access options.
Cite this source
Junyi Qian; Zhongqiu Hua; Zinan Zhi; Wentao Sun; Mengmeng Xiao; Shangjing Yang; Yu Xia; Kailing Sun; Zhiyong Zhang. Dual-Gate Field-Effect Transistor Ultrahighly Sensitive Hydrogen Sensors Enabled by an Ultrahigh Inherent Gain. ACS Applied Electronic Materials. 2025-05-15. https://doi.org/10.1021/acsaelm.5c00381