Study of base resistance and TCAD modeling using germanium profiles in silicon germanium heterojunction bipolar transistor operating under linear regime
Dinesh Gupta; Kumar Prashant; Kumar Manoj
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Semiconductor Science and Technology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1361-6641/ae66ae
The original publisher provides the full text and its access options.
Cite this source
Dinesh Gupta; Kumar Prashant; Kumar Manoj. Study of base resistance and TCAD modeling using germanium profiles in silicon germanium heterojunction bipolar transistor operating under linear regime. Semiconductor Science and Technology. 2026-05-01. https://doi.org/10.1088/1361-6641/ae66ae