In-Ga-Zn-O Vertical Transistor Technology for the New Type of 4F 2 DRAM Application
Ken-Ichi Haga; Shoichi Kabuyanagi; Keiko Ariyoshi; Keiji Ikeda; Kei Sakamoto; Shosuke Fujii; Takeshi Fujimaki; Tseng Fu Lu; Szu Yao Chang; Chiang-Lin Shih
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 32nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.23919/am-fpd66451.2025.11110293
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Cite this source
Ken-Ichi Haga; Shoichi Kabuyanagi; Keiko Ariyoshi; Keiji Ikeda; Kei Sakamoto; Shosuke Fujii; Takeshi Fujimaki; Tseng Fu Lu; Szu Yao Chang; Chiang-Lin Shih. In-Ga-Zn-O Vertical Transistor Technology for the New Type of 4F 2 DRAM Application. 2025 32nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD). 2025-07-01. https://doi.org/10.23919/am-fpd66451.2025.11110293